Next-gen superjunction MOSFETs deliver lower EMI & RDS(ON)

18th May 2016
Posted By : Barney Scott
Next-gen superjunction MOSFETs deliver lower EMI & RDS(ON)

Toshiba Electronics Europe is set to announce the development of its next generation of superjunction (SJ) deep trench semiconductor technology for high-efficient power MOSFETs.  Devices based on the DTMOS V process operate with lower EMI noise and reduced on resistance (RDS(ON)) compared to previous DTMOS IV MOSFETs. 

As with the previous DTMOS IV semiconductor technology, DTMOS V is based on a single epitaxial process involving ‘deep trench etching’ followed by P-type epitaxial growth.  The deep trench filling process results in a narrowing of cell pitch and a lowering of RDS(ON) when compared with more conventional planar processes. Toshiba’s deep trench process allows an improved thermal coefficient of RDS(ON) compared to conventional super junction MOSFETs using multi epitaxial growth process

With DTMOS V, Toshiba has been able to reduce RDS(ON) of the DPAK TK290P60Y by up to 17% compared with the lowest RDS(ON)available from the TK12P60W DTMOS IV MOSFET. The company has also further optimised the trade-off between switching performance and EMI noise

DTMOS V MOSFETs will simplify the design and improve the performance of power conversion applications, including switching power supplies, power factor correction (PFC) designs, LED lighting and other AC/DC applications. The first MOSFETs based on the fifth generation process will offer ratings of 600V and 650V and be supplied in DPAK (TO-252) and TO-220SIS (smart isolation) packaging. Maximum ON resistance ratings will range from just 0.29Ω to 0.56Ω.

You must be logged in to comment

Write a comment

No comments

Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

AMPER 2019
19th March 2019
Czech Republic Brno Exhibition Centre
LOPEC 2019
19th March 2019
Germany Messe Munchen
RF & Microwave 2019
20th March 2019
France Paris Expo, Porte de Versailles
ADAS Sensors 2019
20th March 2019
United States of America Detroit, Michigan
Anti-Counterfeiting Forum 2019
20th March 2019
United Kingdom Farnborough, Hampshire