GaN RF technology and GaN-on-SiC foundry services at CSICS 2017

5th October 2017
Source: Wolfspeed
Posted By : Anna Flockett
GaN RF technology and GaN-on-SiC foundry services at CSICS 2017

Wolfspeed is amplifying RF amplifier technology, as well as showcasing the GaN-on-SiC commercial foundry services, at CSICS 2017, enabling RF design engineers to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.

Wolfspeed will be exhibiting at the 2017 IEEE Compound Semiconductor IC Symposium (CSICS), the leading international forum for advancing the technologies involved in compound semiconductor integrated circuits, encompassing GaAs, InP, GaN, SiGe, and nanoscale CMOS technology, scheduled for 22nd-25th October, 2017 in Miami, FL.

Exhibiting in Booth #200, Wolfspeed engineers will be showcasing the company’s highly-reliable commercial open GaN-on-SiC foundry services, as well as demonstrating their latest best-in-class GaN-on-SiC power devices for an extensive range of RF power amplifier applications for military communications systems, radar equipment, electronic warfare and electronic counter-measure systems, as well as commercial RF applications in the industrial, medical, and scientific (ISM) band. Wolfspeed’s GaN RF technology leads the industry in reliability with a FIT rate of less than ten after billions of device hours of field operation.

“As GaN-on-SiC RF technology has entered the mainstream in commercial wireless infrastructure, our industry-leading open RF foundry and components business continues to innovate to meet the changing cost, efficiency, and performance demands needed for upcoming  5G systems,” said Jim Milligan, Vice President, RF and Microwave Products. “As a leader in commercialising GaN-on-SiC technology for RF applications, we are proud to contribute to the IEEE CSICS Symposium as the conference continues to be at the forefront of innovation in compound semiconductors.”


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