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NXP takes GaN mainstream at EuMW 2012

28th November 2012
ES Admin
0
At European Microwave Week 2012 we demonstrate our GaN portfolio: CLF1G0060(S)-10, CLF1G0060(S)-30, CLF1G0035(S)-50, CLF1G0035(S)-100, CLF1G0035(S)-100P and CLF1G0035(S)-200P. Features include:
High frequencies, bandwidth up to 6 GHz
• High efficiencies
• Excellent linearity
• High power density
• High thermal conductivity
• Operation at higher temperatures, without loss of reliability
• Excellent ruggedness

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