News & Analysis

Infineon provides FOXESS with power semiconductors

17th April 2024
Sheryl Miles

Infineon Technologies supplies its power semiconductor devices to FOXESS, a fast-growing specialist in the green energy industry and a manufacturer of inverters and energy storage systems.

The two sides aim at promoting the development of green energy.

Infineon will provide FOXESS with its CoolSiC MOSFETs 1,200V, which will be used with EiceDRIVER gate drivers for industrial energy storage applications. At the same time, FOXESS' string PV inverters will use Infineon's IGBT7 H7 1,200V power semiconductor devices.

The global market for photovoltaic energy storage systems (PV-ES) has grown at a high speed in the last years. As competition in the PV-ES market accelerates, improving power density has become key to success, and how to improve efficiency and power density for energy storage applications has attracted much attention. Infineon's CoolSiC MOSFET 1,200V and IGBT7 H7 1,200V series power semiconductor devices adopt the latest semiconductor technologies and design concepts that are tailored to industrial applications.

With a high power density, Infineon's CoolSiC MOSFETs 1,200V can reduce losses by 50% and provide ~2% additional energy without increasing the battery size, which is especially beneficial for high-performance, lightweight, and compact energy storage solutions. FOXESS’ H3PRO 15kW–30kW energy storage series uses Infineon's CoolSiC MOSFETs 1,200V for all models. Thanks to Infineon's excellent performance, the H3PRO series has achieved an efficiency of up to 98.1% and excellent EMC performance; with superior performance and reliability, the H3PRO series has seen rapid sales growth in the global market.

Infineon's TRENCHSTOP IGBT7 H7 650V / 1,200V series has lower losses and helps improve the overall efficiency and power density of inverters. In high-power inverter projects, high-current mould packaged discrete devices with current handling capability above 100A can reduce the number of IGBTs in parallel and replace the IGBT module solution, further improving system reliability and reducing costs; in addition, the H7 series has become an industry benchmark for its high-quality performance and greater resistance to humidity. At present, FOXESS' main industrial and commercial model, the R Series 75–110kW, redefines the overall design of the 100kW model by using IGBT7 H7 series discretes, and the efficiency of the whole machine can reach up to 98.6%. Thanks to the low power loss and high power density of the IGBT7 H7 series in discrete packages, technical problems such as current sharing in the paralleling process can be simplified and optimised.

Every power device needs a driver, and the right driver can make the design a lot easier. Infineon offers more than 500 EiceDRIVER gate drivers with typical output currents of 0.1A~18A and comprehensive protection functions including fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault reporting, shutdown, and overcurrent protection, suitable for all power devices including CoolSiC and IGBTs.


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