Finwave Semiconductor secures $8.2M to unlock true potential of GaN-on-Si

“We are emboldened by the support of our investors, who share our belief in the commercial potential of our technology,” said Dr. Pierre-Yves Lesaicherre, CEO of Finwave. “This funding round validates the years of engineering and innovation behind our proprietary GaN-on-Si technology and provides resources we need to move from the development phase to delivering differentiated, high-performance products. More than just funding, this is a clear endorsement of our direction – and a strong signal that the industry believes in the path we’re on.”

Finwave will use this investment to accelerate revenue generation, expand its product portfolio, and continue developing innovative GaN-on-Si technology for the following targeted market segments: high-power RF switches, power amplifiers for communications infrastructure, and power amplifiers for mobile devices.

“Since our initial investment, Finwave has made remarkable progress towards becoming a leader in GaN-on-Si high-performance RF components,” said Jennifer Uhrig, Senior Managing Director, Fine Structure Ventures. “Their strategic foundry partnership with GlobalFoundries and distribution partnership with RFMW have been particularly notable, legitimising their design capabilities and giving customers confidence in Finwave’s ability to bring high-performance, reliable products to market.”

GaN is quickly becoming one of the most promising semiconductor technologies destined to power both the future of communication and sustainability. Finwave’s GaN-on-Si technology improves on the performance of GaN solutions while adopting the cost and scale of manufacturing advantages from high-volume CMOS silicon wafers. The company’s product portfolio includes high-power RF switches, which are now globally available due to Finwave’s partnership with leading RF distributor RFMW, as well as upcoming RF power amplifiers.