onsemi’s SiC JFET UG4SC075005L8S has been shortlisted for the Electronics Excellence Awards under the Power category.
The onsemi EliteSiC JFET completes the family of existing HEMT MOSFETS (EliteSiC M1, M2, M3) and Diodes.
Together with its wide portfolio in silicon MOSFET and IGBT with market leading technologies, onsemi is a fully equipped power semiconductor supplier with decades of knowledge and high market experience.
The combo‑FET architecture enables single‑digit RDS(on), significantly reducing conduction losses compared to many SiC MOSFETs. Lower losses translate directly to higher power density and easier thermal design.
The underlying SiC JFET structure provides exceptional ruggedness, including high pulse‑current capability, high dv/dt tolerance, and short‑circuit rating. This level of linear‑mode and surge robustness often exceeds that of equivalent SiC MOSFETs – critical for breakers, relays, and protection circuits.
For more information, visit: https://www.onsemi.com/download/data-sheet/pdf/ug4sc075005l8s-d.pdf
The Electronics Excellence Awards ceremony will take place at embedded world on 11th March at 4.30pm at the Hall 5 Forum.
You’re all welcome to come and see which product will win!
