Z-RAM Ultra-Dense Memory Now Backed by 21 Patents

29th March 2007
ES Admin
Innovative Silicon (ISi), the developer of ZRAM high density memory intellectual property has announced that it has been awarded its 21st patent, and has another 43 more patent applications pending worldwide. For 2007, to date, the company has already been granted four U.S. patents for low power consumption, data storage and other important contributions related to its memory technology. The newest patent numbers include 7,170,807; 7,187,581; 7,184,298 and 7,177,175.
“These patents demonstrate the level of innovation from the exceptional engineering team at ISi that results in a highly differentiated IP offering,” said Mark-Eric Jones, president and CEO of ISi. “We are committed to continue this innovation in order to constantly improve and expand our Z-RAM memory technology and provide our licensees with the compelling solutions that they need for a wide range of different applications.”

ISi’s portfolio of patented inventions in the area of ultra-dense semiconductor memory technology that exploits the floating body effect of SOI devices was first presented in 2001 at the IEEE International SOI Conference. Since that time, ISi’s Z-RAM technology has unveiled two generations of its products with Z-RAM Gen2 being announced in December 2006.

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