TriQuint leads multiple GaN R&D endeavors including DARPA’s ‘NEXT’ program for high-frequency, mixed-signal amplifiers, the Microscale Power Conversion program and the Defense Production Act Title III manufacturing enhancement effort. NJTT will set the stage for substantial MMIC performance enhancements including reduced size, weight and power consumption while increasing reliability and output power, remarked Infrastructure & Defense Products VP and GM, James L. Klein.
TriQuint semiconductor Inc wins gallium nitride contract from the Defense Advanced Research Projects Agency
TriQuint has won a new gallium nitride contract from the Defense Advanced Research Projects Agency to enable a threefold increase in circuit power handing. The Near Junction Thermal Transport effort will focus on reducing heat that can limit GaN circuit capabilities in defense and commercial systems.
