RIBER and TRUMPF start collaboration on next-generation III-V high power semiconductor lasers

In the quest for higher power and increased life time of semiconductor lasers within TRUMPF’s semiconductor program, TRUMPF Photonics and its partners are exploring facet passivation processes to prolong the life of semiconductor lasers at higher power densities. Together with Riber efficient passivation techniques for GaAs facets will be tackled.

Facet passivation process is implemented through both top-quality MBE and the capability to handle substrates for bar-based lasers. Riber's MBE412 sold to Trumpf allows for ultra high vacuum conditions and delivers processed wafers automatically and quickly.