Power Integrations outlined the benefits of its PowiGaN gallium-nitride technology for next-generation AI data centres. The capabilities of 1250V and 1700V PowiGaN technology for 800VDC power architectures are explained in a new whitepaper from Power Integrations, published at the 2025 OCP Global Summit in San Jose, where NVIDIA provided an update on the 800VDC architecture. Power Integrations is collaborating with NVIDIA to accelerate the transition to 800VDC power and megawatt-scale racks.
The new whitepaper details the performance advantages of Power Integrations’ 1250 V PowiGaN HEMTs, illustrating their field-proven reliability and their ability to meet the power-density and efficiency requirements (>98%) of the 800VDC architecture. Further, the paper demonstrates that a single 1250V PowiGaN switch delivers greater power density and efficiency compared to stacked 650V GaN FETs and competing 1200V SiC devices.
The whitepaper also highlights Power Integrations’ InnoMux2-EP ICs as a solution for auxiliary power supplies in 800VDC data centres. The InnoMux-2 device’s integrated 1700V PowiGaN switch supports 1000VDC input voltage, while its SR ZVS operation provides greater than 90.3% of 12V system efficiency in a liquid-cooled, fan-less 800VDC architecture.
“With rising AI power demands, moving to an 800VDC input simplifies rack design, makes more efficient use of space and reduces copper usage,” said Roland Saint-Pierre, Vice President of Product Development at Power Integrations. “With rising rack power demands, we see 1250V and 1700V PowiGaN devices as ideal choices for main and auxiliary power supplies, delivering the efficiency, reliability, and power density required in 800VDC data centres.”
Power Integrations introduced its first GaN ICs in 2018 and currently has more than 175 million GaN switches in use in end products ranging from fast chargers to data centres to EVs.
