Innovative Silicon’s Z-RAM Named Number One Emerging Technology at ESC Electronics Award Gala

5th April 2007
ES Admin
Innovative Silicon Inc. (ISi), the developer of Z-RAM ultra-dense memory intellectual property (IP), announced that its technology was named the number one winning technology by IEEE Spectrum Magazine readers. The award was presented to ISi during the Embedded Systems Conference in San Jose yesterday at the Third Annual Creativity in Electronics Award Gala that celebrated creators of technology. IEEE Spectrum readers were asked to choose among the five technology winners covered in the January 2007 issue and pick the technology most likely to emerge as a commercial success.
Over 50 percent of nearly 1000 voting readers indicated that ISi should be selected for the award. IEEE Spectrum’s January coverage of ISi as a winning semiconductor can be found at: , and

Mark Eric Jones, ISi CEO said, “Receiving this award at this point in our company’s history is a huge validation to our business and technology direction. We are very appreciative of the IEEE Spectrum readers for their vote of confidence in ISI and thank them for naming our company. In the months to come, we are planning a number of new developments to prove their validation.”

Innovative Silicon has been the recipient of other prestigious awards. ISi’s chief scientist and co-founder, was recognized in 2007 by EE Times’ as an ACE Award Innovator of the Year Finalist. Editors at semiconductor trade magazine EE Times named ISi to its list of 60 Emerging Startups, which is better known as the “Silicon 60,” each year since the list was created in early 2004. The company received the Red Herring 100 Europe 2007 award, which recognizes Europe’s 100 “most promising” companies driving the future of technology. The 2006 Frost & Sullivan Product Innovation award was presented to ISi for the invention of the capacitorless memory device that overcomes the limitation in scaling dynamic random access memory (DRAM) for future memory needs. ISi was also awarded the “Best Invention of the Year” status by the Swiss Federal Institute of Technology (EPFL).

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