Imec presents an ultra-thin hybrid floating gate cell at IEDM2012
Imec announces that it has developed an ultra-thin hybrid floating gate cell with demonstrated functionality. The results, which are presented at this week’s 2012 IEEE International Electron Devices Meeting in San Francisco, USA, December 10-12, 2012, are an important step for further scaling of NAND Flash technology towards the 10nm half pitch node and beyond.The
Moreover, to limit the cell to cell interference occuring in a high-density NAND array, imec scaled down the thickness of the hybrid floating gate to only 4nm.
Jan Van Houdt, Director of the Flash memory program at imec: “Flash memory is the state-of-the-art technology in all mobile devices, ranging from cell phones, digital cameras, USB sticks, MP3 players and tablets, to solid state drives. To address the exploding demand for memory capacity in such devices, imec is pushing the roadmap of the current Flash technology. We are excited to have demonstrated this functional ultra-thin hybrid floating gate cell technology, as an enabling solution for our partners to scale Flash memory down to 10nm and further increase the memory capacity in next-generation mobile devices”.
These results were obtained in cooperation with imec’s key memory partners INTEL, Micron, Samsung, SanDisk, Toshiba and SK Hynix.