Analysis

Government grant to accelerate GaN-on-SiC LED technology

15th July 2015
Jordan Mulcare
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Plessey Semiconductors announced that it will be leading a £1.3m government funded project in conjunction with AIXTRON and Bruker Nano Surfaces Division. This project will accelerate high volume manufacturing of Plessey's innovative LEDs created with GaN-on-SiC technology at its Devon based manufacturing site.

In accordance with a press release issued on 26th March 2015 from the department for Business, Innovation and Skills, twenty supply chain projects from across the country will benefit from a £67m government investment. There is £109m being invested in the same projects by industry.

Dr. Keith Strickland, CTO, Plessey, said, "This project supports the work we have ongoing with AIXTRON and Bruker to further increase the yield of our GaN-on-SiC process. These improvements are required as part of our move to 200mm silicon substrates. A 200mm wafer has almost twice the usable area of our existing 150mm wafers and therefore will almost double the number of LEDs produced for the same relative cost."

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