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RF3928 GaN Wideband Pulsed Power Amplifier
MIPS Technologies’ Processor IP at the Heart of Sequans’ New LTE SoCs for Handsets and Tablets

RF3928 GaN Wideband Pulsed Power Amplifier

The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package.
28 October 2011
byNews Desk

High terminal impedance enables wideband operation and minimizes overall PCB real estate. This matched GaN transistor is packaged in a hermetic, flanged ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.

Features

• Wideband Operation 2.8GHz to 3.4GHz

• Advanced GaN HEMT and Heat-Sink Technology

• Optimized Evaluation Board Layout for 50Ω Operation

• Small Signal Gain: 12dB

• Drain Efficiency: 52%

Applications

• Radar

• Air Traffic Control and Surveillance

• General Purpose Broadband Amplifiers

For more information on RF3928, visit

https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RF3928.aspx

28 October 2011
byNews Desk

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28 October 2011
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MIPS Technologies’ Processor IP at the Heart of Sequans’ New LTE SoCs for Handsets and Tablets

28 October 2011

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