Wireless
Toshiba Expands GaN HEMT Product Family with Power Amplifier for Extended Ku-Band Satcom Applications
This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family.
New functions for the compact broadband amplifier system from Rohde & Schwarz
Rohde & Schwarz adds new functions to its R&S BBA100 broadband amplifier family to create a one-box solution. Integrated RF output switches and sample port switches allow the amplifiers to be used for many applications without the need for external switching matrices. Existing third-party amplifiers can also be integrated into the R&S BBA100 system. The modular design allows users to combine many functions into a compact EMC broadband...
Triquint Semiconductor, Agilent Technologies collaborate on next-generation wireless design flow
TriQuint Semiconductor have announced results for building next-generation RF solutions. This includes enhanced TriQuint process design kits with support for Agilent's Advanced Design System 2011 EDA software and the development of an ADS RF Module PDK for TriQuint's RFIC/MMIC and RF Module integrated design flow.
Harvest Energy from a Single Photovoltaic Cell
To simplify the distribution of wireless communications for instrumentation, monitoring and control applications, power supply designers strive for device grid-independence. Batteries, the immediately obvious solution, offer the illusion of grid independence, but require replacement or recharging, which means eventual connection to the grid and expensive human intervention and maintenance. Enter energy harvesting, where energy is collected from t...
Cree Demonstrates Industry’s First C-Band GaN HEMT MMIC High-Power Amplifier for Satellite Communications
Cree, Inc. will demonstrate the industry’s first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers.
Ultra-Broadband double-balanced mixer
The M4-10M10 features 10 MHz to 10 GHz ultra-broadband LO/RF performance, making it unique in the M4 mixer family.
Atheros Introduces Industry’s Most Advanced Dual-Band, Dual-Stream Wi-Fi Chip for High Performance Audio Visual Consumer Experiences
AR9374 Chip Offers 2x2 Dual-Band 802.11n MIMO Solution and 40MHz Transmissions to Support High Data-Rate USB and Embedded CE Applications
Small SMT Mountable 3G Module
The SIM5320E from SIMCom is dual-band HSDPA/WCDMA and quad-band GSM/GPRS/EDGE module solution in a SMT type which supports HSDPA up to 3.6Mbps for downlink data transfer.
Avago Technologies Introduces Market's First WiMAX Coexistence Front-End Module for Simplified Design of Mobile Electronics
Highly-Integrated, Small-Footprint Module Delivers Best-in-Class Noise Rejection; Provides Complete RF Front-End Solution for Streamlined Time to Market
Avago Debuts Integrated Switch and Low-Noise Amplifier Modules for TD-SCDMA and TD-LTE Base Stations
Compact, Fully-Matched Solutions Replace Three Discrete Devices to Save PCB Space, While Delivering Superior Noise Figure, Linearity and Power Handling Performance