Joachim Stange, product manager, transistors, NXP Semiconductors, commented: “Achieving this high value for drain and collector current in such a small plastic package is unprecedented. With this milestone, NXP continues to push the envelope in ultra-compact packaging and performance in MOSFETs and bipolar transistors.”
The new product series is available in two package versions. Offering a power dissipation capability of 1 W, the single-die DFN1010D-3 (SOT1215) package comes with the special feature of tin-plated, solderable side pads. Meeting strict automotive requirements, these side pads offer the advantage of optical soldering inspection, as well as a better quality of solder connection compared to conventional leadless packages. With a 1.1-mm² footprint, the dual-die package DFN1010B-6 (SOT1216) is the smallest package available for dual transistors.
Delivering equivalent or even better performance, the products in DFN1010 can replace many WL-CSP devices, as well as larger DFN and standard leaded SMD packages such as SOT23 which is eight times the size.
The single and dual MOSFETs (N-ch/P-ch) feature low RDSon values down to 34mOhm, ID up to 3.2 A, voltage range of 12 V to 80 V and ESD protection of 1 kV. The single low VCEsat (BISS) transistors feature low VCEsat values down to 70 mV, collector current up to 2 A, peak collector current up to 3 A, VCEO of 30 V and 60 V and AEC-Q101 qualification. Dual NPN/PNP resistor-equipped (digital) transistor and single and dual general purpose transistors are also included in the new NXP transistor portfolio.
The new transistors in DFN1010 are available immediately in high-volume production.