A new breakthrough could push the limits of the miniaturization of electronic components further than previously thought possible. A team at the Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS–CNRS, Toulouse) and Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN, CNRS / University of Lille 1 / University of Valenciennes and HainautCambresis / Isen) has built a nanometric transistor that displays excep...