Company created in France to respond to leading power electronic end users request in the field of automotive, solar and industrial application. Those end users want to leverage on wide bandap semiconductor opportunity to innovate in their own system roadmap through higher integration, efficiency and cost competitiveness. The GaN power device manufacturer, uses existing GaN material technology to develop the ultimate GaN power-device solution, with the goal of accelerating large-scale adoption of this “electrical converter booster” technology in 200-mm semiconductor manufacturing.
GaN’s performance for a wide range of applications
Continuing its progress in accelerating the adoption of gallium-nitride (GaN)-on-silicon semiconductors in power markets, leading GaN innovator Exagan has opened a new Power Solutions Center in Toulouse, France, to extend its applications support and market reach in wide-ranging, customer-specific end products.
electronica 2018: High power conversion solutions for EVs
Exagan is extending its market reach by introducing new G-FET power transistors and G-DRIVE intelligent, fast-switching devices with enhanced power capabilities for automotive and server applications. With the products’ drain-source on resistance (RDSon) capabilities ranging from 30-65mΩ, these new releases provide enhanced performance and power efficiency for diverse applications including Electric Vehicles (EV), indus...
GaN promises to revamp consumer design
At PCIM 2018, Exagan highlighted its G-FET power transistors and G-Drive intelligent switches, which integrate a drive and transistor in a single package.