Companies

Cree

  • 4600 Silicon Drive Durham
    NC 27703
    United States of America
  • 001 (919) 313-5300
  • www.cree.com
  • 001 (919) 313-5558

Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for wireless and power applications.

Cree Articles

Displaying 1 - 20 of 228
Analysis
21st January 2019
Agreement to boost expansion of SiC in automotive applications

It has been announced that Cree has signed a multi-year agreement to produce and supply its Wolfspeed silicon carbide (SiC) wafers to STMicroelectronics. The agreement governs the supply of a quarter billion dollars of Cree’s advanced 150mm silicon carbide bare and epitaxial wafers to STMicroelectronics during this period of extraordinary growth and demand for silicon carbide power devices.

Optoelectronics
12th March 2018
LED canopy luminaire delivers industry leading performance

Cree has developed the 20K lumen CPY250 LED canopy luminaire (Version B). Delivering a remarkable 140 LPW, the newest Cree’s latest edition of its CPY Series offers even better light experiences and lower operating costs. The result is increased visibility to outperform poor quality LED lighting installations and metal halide lighting options. The high-performing luminaire works as a one-to-one replacement of existing fixtures, or...

Optoelectronics
3rd January 2018
Upgraded streetlights provide better illumination

An upgrade to Cree Europe's NanoOptic Precision Delivery Grid optical system has been announced. The system is designed to enhance the performance of Cree streetlights across the Europe, Middle East and Africa (EMEA) markets. The optics will be mounted on new orders of luminaires across the XSP, Urban, Square LED and RKT series.

Optoelectronics
4th August 2017
The latest street lighting series with launch of XSPM for EMEA

Cree Europe has announced the latest addition to its industry-leading LED roadway lighting XSP Series with the launch of the new XSPM luminaire. The new street light is tailored to meet the demands of the Europe, Middle East and Africa (EMEA) market, and expands Cree Europe’s XSP Series family with increased lumen output performance, lower wattage and more advanced control options.

Optoelectronics
6th April 2017
Industry’s brightest and most efficient Royal Blue LED

Cree has announced the new XLamp XP-G3 Royal Blue LED, the Royal Blue LED. The new XP-G3 LED doubles the maximum light output of similar size competing LEDs and delivers wall-plug efficiency of up to 81%. This performing Royal Blue LED expands Cree’s high power portfolio, enabling lighting manufacturers to deliver differentiated LED solutions for applications such as horticulture, architectural and entertainment lighting.

Power
11th May 2016
All-SiC power module achieves efficiencies over 98%

Wolfspeed, a Cree company, has introduced a high-performance 62mm power module, using the company's second generation SiC to produce all SiC power modules, claimed to enable unprecedented efficiency and power density for  converters, inverters, motor drives, industrial electronics and EV systems.

Analysis
5th May 2016
Evaluate the performance of SiC-based power circuits

Wolfspeed, A Cree Company, has introduced a free online circuit simulation tool that allows power electronics design engineers to simulate and evaluate the performance of SiC-based power circuits, and to aid in the selection of the optimum SiC devices for each application. 

Power
4th May 2016
Wolfspeed releases 28V 30W GaN HEMT Die

Wolfspeed has released a 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13th, 2016 in Clearwater Beach, Fla. Designed for up to 8GHz operation, the  28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical small signal gain at 4GHz, and 30W typical PSAT.

Frequency
13th April 2016
Wolfspeed GaN RF devices demonstrate space reliability

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems. Wolfspeed’s proven GaN-on-SiC fabrication processes have demonstrated industry-leading reliability and performance, delivering more than 100bn total hours of field operation with a best-in-class FIT rate of less than-5-per bn device hours for discrete ...

Events News
8th March 2016
Wolfspeed to exhibit SiC power portfolio at APEC 2016

Wolfspeed, A Cree Company, will be showcasing its industry-leading solutions at this year’s Applied Power Electronics Conference and Exposition (APEC 2016). The annual conference, which will take place March 20 – 24th in Long Beach, Calif., is globally recognised as the leading North American technical gathering dedicated to the applied power electronics industry. In addition to their exhibition, Wolfspeed engineers will be presenting...

Power
4th February 2016
SiC MOSFETs enable higher efficiency & power density

Wolfspeed, a Cree company, has announced that Gruppo PBM is using its MOSFETs in the HF9 battery charger family to enable higher efficiency and power density at a lower overall system cost.

Power
5th October 2015
Surface-mount SiC MOSFET provides 1.7kV blocking voltage

Wolfspeed, A Cree company, continues its innovation in SiC power device technology and packaging with the introduction of the industry’s first 1,700V SiC MOSFET offered in an optimised surface mount package designed for commercial use in auxiliary power supplies in high voltage power inverter systems.

Analysis
7th September 2015
Cree renames Power and RF division: Wolfspeed

Cree has announced that Wolfspeed is the latest name for the Power and RF division of Cree. The company announced in May that it would separate the business into a standalone company. Founded upon the mission to liberate power and wireless systems from the limitations of silicon, Wolfspeed enters the marketplace as a well-established, entrepreneurial growth company with a focused team, a profitable business and more than 28 years of industry-lead...

Analysis
4th September 2015
Funding enables development for F-35 Joint Strike Fighter

The U.S. Air Force has awarded a follow-on contract of $4.1m to Cree. This new funding will enable the qualification of a high-performance power electronic module developed for the F-35 Joint Strike Fighter in the company’s Fayetteville, Ark. facilities.

Events News
27th August 2015
Cree to deliver five presentations at ECCE 2015

Cree is delivering five technical presentations at the seventh annual IEEE Energy Conversion Congress and Expo (ECCE 2015), which will take place from 20th to 24th September, 2015 at the Palais des Congrès in Montreal. ECCE 2015 will provide practicing engineers, researchers, entrepreneurs and other professionals from the electrical and electromechanical energy conversion industries with a wide variety of interactive and multidisciplinary ...

Optoelectronics
27th July 2015
LEDs feature high-voltage power die architecture

Cree announces the latest XLamp XHP35 family of LEDs with 50% more light output than Cree’s previous highest-performing single-die LED, setting a new performance standard for the 3.5mm footprint. Built on Cree’s SC5 Technology platform, the XHP35 LED introduces Cree’s breakthrough high-voltage power die architecture, empowering manufacturers to unleash the full capacity of extreme high power LEDs using existing drivers. The XHP3...

Power
18th July 2015
Using SiC devices in a three-phase motor drive application

SiC (Silicon Carbide) MOSFET modules with blocking voltages of 1,200V and RDSON values as low as 20mΩ, offer a real alternative to 1,200V Si IGBTs in motor drives. John Mookken and Julius Rice, Cree, explore the economics of using the more expensive SiC module with the performance gains and added complexities at the system level.

Analysis
13th July 2015
Cree acquires APEI

Cree has announced the acquisition of APEI. Combining two highly complementary innovators, the acquisition enables Cree’s Power and RF business to extend its leadership position and help to accelerate the market for high-performance, best-in-class SiC power modules.

Power
14th May 2015
Industry's first 900V SiC MOSFET offers 65mΩ RDS(ON)

Cree has introduced its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimised for high frequency power electronics applications, including renewable energy inverters, EV charging systems and three-phase industrial power supplies, the 900V platform enables smaller and higher efficiency next-gen power conversion systems at cost parity with silicon-based solutions.

Power
7th May 2015
Power electronics portfolio to be presented at PCIM

Cree has announced that it will exhibit, introduce a product, and speak at PCIM 2015, which will take place 19th to 21st May 2015 in Nuremberg, Germany. Internationally recognised as a foremost power electronics conference and exhibition, PCIM addresses recent developments in power semiconductors, passive components, thermal management, energy storage, sensors, materials and systems.

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