Alliance Memory, Inc.

Address:
United States of America

Alliance Memory, Inc. articles

Displaying 1 - 20 of 46

Improved performance with high-speed CMOS DDR4 SDRAMs

Improved performance with high-speed CMOS DDR4 SDRAMs
Alliance Memory has announced that it has expanded its product offering with a new line of high-speed CMOS DDR4 SDRAMs. For improved performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 offer lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages.
16th October 2019

SDRAMs combine low power consumption with faster data transfer

A line of high-speed CMOS DDR4 SDRAMs has been released by Alliance Memory. For improved performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 offer lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages.
14th October 2019

NOR flash memories provide 55ns access times

NOR flash memories provide 55ns access times
A new line of 5V parallel NOR Flash memory products in boot and uniform sectored architectures has been introduced by Alliance Memory. Available in densities from 1M to 16M, the devices offer access times of 55ns to enable fast, low-latency read speeds, allowing for both direct code execution and data storage in a single memory product.
12th September 2019


Low power SDRAM portfolio continues to grow

Low power SDRAM portfolio continues to grow
  Alliance Memory has announced that the company's portfolio of low power SDRAMs for mobile and embedded systems in the automotive, consumer, industrial, and medical spaces continues to grow. The latest additions include two new 256Mb LPDDR2 devices: the AS4C8M32MD2A-25B2CN and AS4C8M32MD2A-25BCN.
14th May 2019

Drop-in replacement for micron EOL single-die SDRAMs

Drop-in replacement for micron EOL single-die SDRAMs
It has been announced that Alliance Memory has introduced new dual-die 8Gb DDR3L SDRAMs that are pin-for-pin drop-in replacements for and fully compatible with end-of-life, single-die 8Gb DDR3Ls from Micron Technology. Featuring a DDR architecture, the AS4C1G8D3LA and AS4C512M16D3LA provide speed of 10ns, extremely fast data rates of 1866Mbps, and clock rates of 933MHz.
26th April 2019

Automotive DRAM lead times cut to six weeks

Greatly reduced lead times for its DRAMs with -40°C to +105°C automotive temperature ratings have been announced by Alliance Memory. Responding to customer demand, the company now holds many parts in finished goods stock and in addition can promise lead times of just six weeks for its most popular automotive temperature range products.
7th January 2019

Monolithic CMOS SDRAMs in 54 and 86-Pin TSOP II packages

Monolithic CMOS SDRAMs in 54 and 86-Pin TSOP II packages
It has been announced that Alliance Memory has extended its offering of 512Mb high-speed CMOS SDRAMs with new monolithic 64Mx8 (AS4C64M8SC-7TIN) and 32Mx16 (AS4C32M16SC-7TIN) devices in the 54-pin 400-mil plastic package, and a 16Mx32 (AS4C16M32SC-7TIN) device in the 86-pin TSOP II package. The new SDRAMs are among the products Alliance Memory will feature next week at electronica 2018 in Stand B5 526.
8th November 2018

Solutions for high-bandwidth low-power applications

Solutions for high-bandwidth low-power applications
A new family of high-speed CMOS pseudo SRAMs (PSRAMs) with densities from eight to 128Mb in 6x7x1mm 48-ball FPBGA and 4x4x1mm 49-ball FPBGA packages, has been introduced by Alliance Memory. The devices combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions for wireless, automotive, networking, and industrial applications.
5th November 2018

Memory products on display at electronica 2018

Memory products on display at electronica 2018
For legacy and new designs Alliance Memory provides hard-to-find SRAMs, pseudo SRAMs, and DRAMs, including DDR, DDR1, DDR2 and DDR3, and low-power LPSDRAM products. Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions over a range of applications requiring high memory bandwidth.
10th October 2018

Low voltage SDRAMs feature a DDR architecture

Low voltage SDRAMs feature a DDR architecture
Alliance Memory has announced that it has expanded its high speed CMOS DDR3 and low voltage DDR3L SDRAMs with new 512Mb 8 times and 16 times devices in the 78-ball and 96-ball FBGA packages, respectively. Featuring a DDR architecture, the SDRAMs provide fast transfer rates of 1,600Mbps and clock rates of 800MHz.
5th January 2018

Low power SRAMs lineup expanded with 64Mb device

Low power SRAMs lineup expanded with 64Mb device
  To meet the demand for low power SRAMs with higher densities, Alliance Memory has introduced a new 64Mb (4Mx16 bit) device in 48‑pin, 12x20mm TSOP-I and 48-ball TFBGA packages. Available from a limited number of suppliers, the AS6C6416-55 operates from a single power supply of 2.7-3.6V and offers a fast access time of 55ns.
10th November 2017

Making it easier to find memory chips in a company's product lineup

Alliance Memory is making it easier for its customers to find any DRAM memory chip in its extensive offering - including scarce allocated devices and uncommon packages and densities - with a new website that shows part inventories at worldwide distributors such as Avnet, Digi-Key, Future, and Mouser.
25th September 2017

Die revisions provide new memory chip source

Die revisions provide new memory chip source
A new die revision (B die) for Alliance Memory's 2Gb and 4Gb devices in the 96-ball FBGA package has been announced, in order to address the memory market's shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs. TJ Mueller, Vice President of Marketing at Alliance Memory, said: "Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more and more limited as demand exceeds supply and suppliers move capacity to Flash and other products.
13th June 2017

RoHS-compliant SRAMs offer low power consumption

RoHS-compliant SRAMs offer low power consumption
To meet the demand for high-density fast CMOS SRAMs, Alliance Memory has introduced new 8Mb and 16Mb x32 devices in the 90-ball 8x13mm TFBGA package. Providing space-saving alternatives to solutions in larger 119-ball packages, the devices are optimised for networking routers and switchers, test and medical equipment, and automotive applications. Featuring access times of 10ns and data retention voltages of 1.5V minimum, the 8Mb AS7C325632-10BIN and 16Mb AS7C351232-10BIN are configured as 256Kx32 and 512Kx32, respectively.
22nd May 2017

1Gb High-Speed CMOS DDR SDRAM comes in 128M x 8 configuration

  Alliance Memory has introduced a 1Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Offered in an industrial temperature range from -40°C to +85°C, the AS4C128M8D1-6TIN features a hard-to-find internal configuration of four banks of 32M word x 8 bits.
28th April 2017

High speed SDRAMs increase portable electronics battery life

High speed SDRAMs increase portable electronics battery life
A new line of high-speed CMOS mobile low-power DDR2 (LPDDR2) SDRAMs has been introduced by Alliance Memory. They have densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. The devices offer a variety of power-saving features, including 1.2/1.8V operating voltages, to extend battery life in portable electronics, while their high density enables slim designs. The LPDDR2 SDRAMs provide reliable drop-in, pin-to-pin compatible replacements for a number of similar solutions in ultra-low-voltage cores and I/O power supplies for mobile devices such as smartphones and tablets.
18th April 2017

512Mb SDRAMs provide pin-for-pin replacements for discontinued Micron devices

512Mb SDRAMs provide pin-for-pin replacements for discontinued Micron devices
Alliance Memory has introduced two 512Mb synchronous DRAMs (SDRAM) in the 54-pin TSOP II package. The AS4C32M16SB-7TCN and AS4C32M16SB-7TIN are available in commercial (0 to +70°C) and industrial (-40 to +85°C) temperature ranges. The devices provide pin-for-pin replacements for Micron Technology's discontinued 32M x 16 MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN) and MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN) SDRAMs.
7th April 2017

LPDDR3 SDRAM optimises battery life

Alliance Memory today introduced a new high-speed CMOS mobile low-power DDR3 (LPDDR3) SDRAM designed to extend battery life in compact portable devices. Featuring low voltage operation of 1.2V/1.8V and a number of power-saving features, the 16Gb AS4C512M32MD3 is offered in the 11.0mm by 11.5mm 178-ball FBGA package. With each new product generation, designers of mobile devices such as smartphones, tablets, and VR and AR headsets are tasked with providing more functionality in less space while using less power.
1st March 2017

Alliance Memory expands rep agreement with ISMOSYS

Alliance Memory announced that the company has expanded its manufacturers' representative agreement with ISMOSYS, the principal trading division of the Spectrum Electronics Group. Having offered Alliance Memory's entire lineup of SRAMs and DRAMs in Italy since 2006, ISMOSYS is now the exclusive representative for the company's memory solutions to direct OEMs and distributor channels in Spain, Portugal, and Turkey.
2nd February 2017

New lower power consumption extends battery life in mobiles

New lower power consumption extends battery life in mobiles
Two high-speed CMOS mobile synchronous DRAMs (MSDR) have been introduced by Alliance Memory, designed to extend battery life in mobile devices. Featuring low power consumption of 1.8V and a number of power-saving features, the 51Mb AS4C32M16MS and AS4C16M32MS are offered in 8x9x54mm ball and 8x13x90mm ball FPBGA packages.
6th October 2016


Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

SPS IPC Drives 2019
26th November 2019
Germany Nuremberg Messe
Vietnam International Defense & Security Exhibition 2020
4th March 2020
Vietnam National Convention Center, Hanoi