Yole Développement says, “The SiC devices market will exceed US$600M by 2020”

19th April 2013
Posted By : ES Admin
Yole Développement says, “The SiC devices market will exceed US$600M by 2020”
Two years ago, Yole Développement said “The SiC industry is not a niche market anymore.” With its SiC technology & market analysis update arriving in May 2013, the French technology consulting company will confirm this statement by announcing that the SiC Devices market will surpass US$600M by 2020. “We expect a SiC market with 30% CAGR between 2015 – 2020,” said Dr. Philippe Roussel, Business Unit Manager, Power Electronics & Compound Semi at Yole Développement.
For the third time, Yole Développement, the SiC Power Center and the Enterprise Europe Network have joined forces to organize the International SiC Power Electronics Applications Workshop 2013. ISiCPEAW is a unique European conference dedicated solely to the silicon carbide industry. Over three days, key players such as CREE, Rhom, Mitsubishi and Infineon will swap SiC technology visions, exchange insights on market developments, and identify business opportunities.

ISiCPEAW 2013 takes place in Stockholm, Sweden from June 9 - 11. Don’t miss this once-a-year opportunity to learn more about SiC technology’s evolution and meet the industry’s leaders.

SiC device makers now offer two main power electronics devices: the diode and the transistor. Hearkening back to 2011, SiC’s two main players, Rohm and CREE, announced the introduction of the first SiC MOSFET devices. The obvious question is, what’s next? Find out at ISiCPEAW 2013, where you’ll discover today’s products and tomorrow’s ideas through a combination of tutorials, presentations, B2B matchmaking and exhibition.

Per Yole Développement, SiC device applications are profligate today in a variety of fields, including trains, wind turbines, EV/HEV, motor control and smart grids... SiC technology, compared to GaN and silicon, provides strong added-value for high & very high-voltage applications (from 1.7kV - 10kV). For applications exceeding 10kV, only a few players are developing SiC devices, and the existing market is still very low. For this reason, ISiCPEAW 2013 will feature a special session dedicated to market opportunities and related technologies for High Voltage SiC, 1.7kV and over.

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In 2012, ISiCPEAW welcomed 200+ attendees from around the world. In 2013, we expect to do even better!

At Yole Développement, we are analysing SiC technology and following the evolution of this market for more than 10 years now. This year again, with our partners, the SiC Power Center and Enterprise Europe Network, we offer a unique and powerful program in Europe, dedicated to the SiC industry. Register today and be a part of the mix, discovering the latest technology trends and exchanging ideas with key players.

The official event program is being updated continuously on the events webpage and the exhibition area is now open.

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