STMicroelectronics signs agreement on LDMOS technology
Global semiconductor manufacturer serving customers across the spectrum of electronics applications, STMicroelectronics has announced that it has signed an agreement on LDMOS RF power technology from Innogration Technologies, a fabless semiconductor company headquartered in Suzhou, China, specialising in the design and manufacturing of RF power semiconductor devices, modules, and sub-system assemblies.
Combining a short conduction-channel length with a high breakdown voltage, LDMOS devices are well suited for RF power amplifiers where they can be used in base stations for wireless communications systems.
As well as in the power amplifiers for commercial and industrial systems. The agreement with Innogration expands the range of applications that ST can address with LDMOS technology.
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Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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