Unlike a conventional PIN diode, APDs use an internal electric field to accelerate the charge carriers set free by the incoming radiation, generating an avalanche of electron-hole pairs through impact ionisation and producing a much larger photocurrent than can be created using a PIN diode.
The SAE series is based on a planar epitaxial structure and can be purchased as either a red or NIR enhanced device, depending on the wavelength range of interest.
The diameter of the active area of the SAE500VS2 is 500 microns and the devices are manufactured in a standard two pin TO-46 can which is hermetically sealed. Other packaging options are available, and the devices can be manufactured with thermo electric coolers in a TO-37 package if required.
The V in the part number signifies the detector is enhanced for operation in the red region of the spectrum, replacing the V with an N indicates an NIR optimised unit. These devices have long expected lifetimes making them well suited for fit and forget applications such as range finding, LiDAR and optical communications.
