In the world of power electronics, the pace of innovation is relentless. Engineers today face tougher challenges than ever before: achieving higher power density, improving system efficiency, and managing thermal performance under increasingly demanding conditions. And often, one of the most critical decisions sits right at the beginning of a project – selecting the right semiconductor technology.
It’s a conversation I find myself returning to again and again: gallium nitride (GaN) or silicon carbide (SiC)? These wide bandgap technologies have both earned their place in the power design toolbox, but each offers different strengths. Whether you’re designing consumer-grade fast chargers, next-generation electric vehicle systems, or ruggedised industrial drives, the decision between GaN and SiC could define the success – or limits – of your end application.
That’s why I’d like to personally invite you to join me for an upcoming technical webinar: GaN vs. SiC – Selecting the right wide bandgap technology for your application.
Find out more in the issue!