The PE29101 integrated high-speed driver is designed to control the gates of GaN Systems’ E-HEMTs. The outputs of the PE29101 can provide switching transition speeds in the sub-nanosecond range.
The evaluation board’s high switching speeds enables smaller peripheral components in a variety of applications, including DC–DC conversion, AC–DC conversion, wireless power charging, and LiDAR.
Additional key features include universal GaN half-bridge with open loop control, ultra-fast switching times of < 1 ns, dead-time control, independent of Vcc and 100 V / 90 A, 7 mΩ GaN E-HEMTs
