The device can reduce the number of transistors in high-power RF amplifiers—decreasing amplifier size and BOM.
It operates up to 500MHz for a broad range of applications, from laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers.
Additional key features include a high drain-source avalanche energy absorption capability, wide frequency range utilisation.
The device is suitable for linear applications and offers integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.