This MOSFET achieves a maximum RDS(ON) of 1.35mΩ at VGS=10V. According to Toshiba, this is the lowest RDS(ON) of any MOSFET currently available. It does so by combining advanced UMOS9 trench technology that minimises RDS(ON) x A, with the DPAK+ package that reduces package resistance compared to conventional DPAK packaging.
The DPAK+ packaging is compatible with standard DPAK designs, measures just 6.5×9.5mm and features copper clip technology that replaces the traditional bondwire connections with copper clips that have a large contact area and are attached directly to the chip metallisation.
The MOSFET is also enhanced compared with previous generations in terms of EMC and switching performance.