Based on a GaAs pHEMT (pseudomorphic High-Electron Mobility Transistor) design, the HMC1131 is suitable for civil and defence communications systems, including point-to-point and point-to-multi-point radios and VSAT and SATCOM applications. The HMC1131 is capable of supplying +25dBm of saturated output power with 16% PAE and operates from a DC Supply of +5V at 225mA.
Housed in a compact, leadless 4×4 mm ceramic surface-mount package, the HMC1131 is available now in sample and production quantities, at a price of $34.15 per unit, in 1,000 unit quantities.