SuperQ is the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices. The architecture breaks through silicon’s fundamental switching and conduction barriers. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices.
The structure also improves resistance and power losses while maintaining the benefits of silicon, including its ruggedness, high-volume manufacturability, and proven reliability at 175°C junction rating.
The first product in iDEAL’s 150V MOSFET series, iS15M7R1S1C, is a 6.4 mΩ MOSFET. It is available immediately in a 5 x 6mm PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability.
The 200V family includes the iS20M6R1S1T, a 6.1 mΩ MOSFET in a 11.5 x 9.7mm TOLL package. This has an RDSon of 6.1 mΩ, which is 10% lower than the current industry leader and 36% lower than the next best competitor. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages.
300 and 400V MOSFET platforms are coming soon – voltage classes underserved by today’s silicon technologies. iDEAL’s upcoming devices are designed to deliver dramatically lower resistance than existing solutions, opening new possibilities for efficiency and performance.
“For the past quarter-century, the industry has relied on Reduced Surface Field (RESURF) technologies like Superjunction, but these architectures’ performance has plateaued. To achieve the necessary gains in power delivery and efficiency, a new architecture is required and that is SuperQ,” said Mark Granahan, CEO and Co-Founder of iDEAL Semiconductor.
“The demand for higher performing power solutions has never been greater. SuperQ will enable emerging critical applications ranging from industrial automation, AI data center and the world’s electrification trends. Today iDEAL is announcing new levels of cost times performance for the designer’s toolbox at 150-400V that simply didn’t exist.”
This innovation is designed for MOSFETs, IGBTs, diodes, power ICs, and even future semiconductor materials, positioning SuperQ as a foundational technology for the next era of power electronics.
iDEAL’s silicon power devices are invented, engineered and fabricated in the United States. They are available in a wide range of industry-standard, drop-in compatible packages, including TO-220, ITO-220, TO-247, D2PAK-3L, D2PAK-7L, DPAK, TOLL, TOLT, and PDFN 5×6. The products are designed for a broad voltage and application spectrum.
“The message is that there is a clear path forward. Many customers who had been using superjunction-type devices had been led to believe that development had reached its limit – that there would be no further next-generation products.
“Now, the message is that a new platform exists – one capable of supporting generational improvements well into the next 15 to 25 years,” said David Jauregui, CTO and Founder, iDEAL Semiconductors.
