This October, Electronic Specifier’s Managing Editor, Paige Hookway takes a look at the top 5 power products released in October 2026.
Low-voltage GaN FETs for AI, data centres, and robotics
Renesas Electronics has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement mode (E-mode) GaN-based discrete power transistors. The RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, and RTP100E1P2G1FL-DSC low-voltage GaN FETs deliver ultra-fast switching speeds and enhanced thermal performance in efficiency-critical, high power density applications, including AI data centres, humanoid robotics, factory automation, and industrial motor drives, power tools, and solar microinverters.
The new GaN FETs achieve industry-leading hard- and soft-switching figure-of-merit (FOM) performance, delivering up to 35% lower hard-switching FOM and up to 63% lower soft-switching FOM than comparable GaN devices. The low-voltage GaN devices also maintain a silicon-compatible footprint that allows for easy adoption into existing designs.
80V power MOSFET module for MHEV and micro mobility applications
Mouser Electronics is now shipping the new VS-HOT200C080 200A, 80V Power MOSFET module from Vishay Intertechnology. The VS-HOT200C080 is an integrated device that saves space, reduces conduction losses, and increases reliability for 48V traction inverters in light electric vehicles (LEV) and belt-start generator/recuperation systems for mild-hybrid electric vehicle (MHEV) applications.
The Vishay VS-HOT200C080 200A 80V Power MOSFET module integrates 80V MOSFETs in a half-bridge configuration, with best-in-class RDS(ON) in a compact transfer-mould FlatPAK HC0 package. In addition, the VS-HOT200C080 features a shunt resistor for current reading, bypass capacitors for improved switching performance, and an NTC for temperature sensing.
New radiation-tolerant GaN point-of-load converter
Microchip Technology announces the POL-05-20S-T, a radiation-tolerant, point-of-load (POL) converter, designed to address the demanding power requirements of space processing applications. The new device uses Gallium Nitride (GaN) power devices to deliver up to 20A of output current with high efficiency and power density.
The converter is supplied in a compact, 25g surface-mount package measuring 1.51” x 1.51” x 0.45”. By delivering 20A in this footprint, the device helps engineers manage the size, power, and energy constraints that accompany increasingly capable onboard processing systems. The GaN-based design is intended to provide a combination of high efficiency, high power density, and continuous current capability for challenging space power applications.
Toshiba launches dual-channel digital isolators for industrial equipment
Toshiba Electronics Europe has announced the launch of four dual-channel digital isolators designed to help reduce power consumption and provide flexible signal isolation, extending its low-power industrial digital isolator line-up. The DCL32xx00 series targets applications including programmable logic controllers (PLCs), I/O interfaces, sensors, actuators, motor-control systems, inverters, and switching power supplies.
The DCL32xx00 digital isolator series addresses requirements with typical operating current consumption of 0.2mA per channel at a 1Mbps data rate, while supporting data transmission at up to 25Mbps. They use Toshiba’s magnetic-coupling isolation technology, together with new circuit technology in the isolation signal-transmission section, to support low-power, stable data transmission.
STMicroelectronics expands MasterGaN range with new 650V power devices
STMicroelectronics has expanded its MasterGaN family of integrated gallium nitride (GaN) power devices with the launch of MasterGaN7, a new series featuring 650V enhancement-mode transistors and a maximum current rating of 6A.
The devices are designed to improve energy efficiency and power density in applications including power adapters, battery chargers, industrial lighting, and solar microinverters.
MasterGaN7 integrates two 650V GaN transistors in a half-bridge configuration alongside a high-voltage, high-frequency gate driver. Housed in a 9mm x 9mm QFN package, the devices share the same pinout and footprint as other products in the MasterGaN family, allowing designers to incorporate the new series into existing designs more easily.
