Infineon Technologies expands its CoolGaN portfolio with the CoolGaN Drive HB 600V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M – integrate two 600V GaN switches in a half-bridge configuration together with integrated high- and low-side gate drivers and a bootstrap diode, delivering a compact, thermally optimised power stage that further reduces design complexity.
By bringing key functions into one optimised package, the family lowers external component count, eases PCB layout challenges typically associated with fast-switching GaN, and helps designers shorten development cycles while achieving the core advantages of GaN technology: higher switching frequencies, lower switching and conduction losses, and greater power density.
“GaN is transforming power conversion, and Infineon’s mission is to maximise the transformation with scalable and easy-to-use solutions for customers,” says Johannes Schoiswohl, Head of GaN Business Line at Infineon. “With these new integrated solutions, we combine high-speed GaN performance with a level of integration and robustness that helps designers move faster, shrink their systems, and raise efficiency – pushing the boundaries of what’s possible in compact power electronics.”
Targeting low-power motor drive systems and switched-mode power supplies, the integrated half-bridge enables smaller magnetics and passive components, higher efficiency across operating conditions, and improved dynamic performance in space-constrained designs. Engineered for high-speed precision, the device achieves ultra-fast switching with a 98ns propagation delay and minimal mismatch, supporting efficient high-frequency operation while maintaining predictable timing behaviour.
For simplified system integration, it offers a PWM input compatible with standard logic levels and operates from a single 12V gate driver supply, while fast UVLO recovery helps ensure robust behaviour during start-up and transient supply events. For superior thermal performance, the products are housed in a 6 x 8mm² TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
These new solutions further reinforce Infineon’s strong position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion know-how, enabling customers to adopt GaN more confidently and scale high-efficiency designs across industrial and consumer platforms.
