Infineon expands CoolSiC MOSFETs

Infineon Technologies has expanded its CoolSiC MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT package Infineon Technologies has expanded its CoolSiC MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT package

Infineon Technologies has expanded its CoolSiC MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT package as well as the TO-247-3 and TO-247-4 packages. Additionally, three new products in the TOLL package have been introduced, with rated voltages of 440V (continuous) and 455V (transient).

The new CoolSiC MOSFETs provide improved thermal performance, system efficiency, and power density. They have been specifically engineered to meet the requirements of high-power and compute-intensive applications, including AI server power supplies, solar inverters, uninterruptible power supplies, Class D audio amplifiers, motor drives, and solid-state circuit breakers. For these critical systems, the devices provide the required reliability and performance.

Compared with existing Si technologies in the 250V and 300V voltage classes, CoolSiC G2 400V and 440V MOSFETs achieve up to 50% lower conduction losses at an operating temperature of 120°C, due to their flat R(DS(on) as a function of junction temperature (Tj).

They also feature significantly improved switching figures of merit, resulting in at least five times lower reverse recovery charge. At the system level, CoolSiC G2 400V and 440V MOSFETs in a three-stage flying-capacitor CCM totem-pole PFC achieved up to 0.4% points higher peak PSU efficiency compared to a state-of-the-art interleaved two-level CCM totem-pole PFC. This translates into approximately 15% lower system losses at peak efficiency.

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