RF power transistor features 20:1 load-mismatch capability

Designed for high-output class-E industrial power supplies, the STAC250V2-500E 13.6MHz RF power transistor has been released by STMicroelectronics. Providing enhanced safety up to 600W, the device has 20:1 load-mismatch capability, which is claimed to be the highest in the industry. Enabling compact power supplies above 1kW, two STAC250V2-500E transistors used together occupy a similar area to that of a single ceramic transistor. 

Increasing reliability, the device provides 25% lower thermal resistance.The STAC250V2-500E, which has a maximum operating voltage of 250V, is manufactured using ST’s latest high-voltage SuperDMOS technology.

Ensuring ruggedness in class-E inductive resonant circuits or other applications such as class-D power amplifiers, the transistor has a breakdown voltage greater than 900V. The STAC250V2-500E is suitable for use in induction heaters, plasma-enhanced vapour-deposition systems, and production equipment for solar cells and flat-panel televisions.

Offered in a 0.55×1.35” STAC air-cavity package, the device is more than 50% smaller than transistors in conventional ceramic packages. The STAC250V2-500E is available now, priced at $66.00 and sold in 1,000 unit quantities.

Keep Up to Date with the Most Important News

By pressing the Subscribe button, you confirm that you have read and are agreeing to our Privacy Policy and Terms of Use
Previous Post

Innovation areas offer focus at electronica

Next Post

24V, 100W model extends panel mount power supply series