Coming in 2.5 inch (6.4cm) form factor and fitted with a 6Gbit/s SATA 3.0 interface, the HK3R eSSDs employ state-of-the-art 19nm MLC NAND which enable the series to achieve sequential read speeds of 500MiB/s and Random Read speeds of 75,000 IOPS. The 240GB and 480GB drives achieve sequential write speeds of 400MiB/s and random write speeds up to 12,000 IOPS, while the 120GB drive reaches sequential write speeds of 280MiB/s and random write speeds of 10,000 IOPS.
Designed to accomodate 1 full drive write per day with 100% random data workload for 5 years, all HK3R eSSDs feature full power loss protection and end-to-end data protection. The drives also incorporate Toshiba’s Quadruple Swing-By Code (QSBC) for improved error correction and reliability.
Samples of the HK3R range will be available during December.
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THNSNJ120PCS3 |
THNSNJ240PCS3 |
THNSNJ480PCS3 |
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User Capacity |
120GB |
240GB |
480GB |
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Interface |
SATA-3.0 (6.0Gbit/s, 3.0Gbit/s, 1.5Gbit/s) |
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NAND Technology |
19nm MLC |
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Sequential Read 64KiB |
500MiB[1]/s |
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Sequential Write 64KiB |
280MiB/s |
400MiB/s |
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Random Read 4KiB |
75,000 IOPS |
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Random Write 4KiB |
10,000 IOPS |
12,000 IOPS |
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MTTF |
2,000,000 hours |
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Operating Condition |
24 hours/day, 7 days/week |
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Product Life |
5 Years |
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Power Consumption Ready (Idle A) |
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Vibration (operating) |
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Vibration (non-operating) |
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Shock resistance (operating) |
9,800 m/s2 {1,000G} / 0.5 ms duration |
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Shock resistance (non-operating) |
9,800 m/s2 {1,000G} / 0.5 ms duration |
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Width |
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Length |
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Height |
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Weight (max.) |
60 g |
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Operating Temperature |
0 to 55°C |
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