This joint development now provides the opportunity to leading High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency significantly compared with structures grown on c-plane GaN substrates.
Semi-Polar GaN wafers for LED & LD device makers
Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, and Ostendo Technologies are pleased to announce the availability of Semi-Polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapour Phase Epitaxy (HVPE) technology.