Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at the Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with collaborators at MIT, National University of Singapore (NUS), and Nanyang Technological University (NTU), have discovered a new method of generating long-wavelength (red, orange, and yellow) light using intrinsic defects in semiconducting materials, with potential applications as direct light emitters in commercial light sources and displays.
This technology would be an improvement on current methods, which use phosphors, for instance, to convert one color of light to another. A type of group-III element nitride-based light-emitting diode (LED), indium gallium nitride (InGaN) LEDs were first fabricated over two decades ago in the 1990s, and have since evolved to become ever-smaller while growing increasingly powerful, efficient, and durable.
Source: “A new way to generate light using pre-existing defects in semiconductors“, Singapore-MIT Alliance for Research and Technology
