Vishay SiRA99DP P-Channel MOSFET for high efficiency

18th August 2020
Alex Lynn

Vishay Intertechnology has introduced a -30V p-channel power MOSFET to offer on-resistance of 1.7mΩ at ten volts. With its low on-resistance and 6.15 by 5.15mm thermally enhanced PowerPAK SO-8 single package, the Vishay Siliconix TrenchFET Gen IV SiRA99DP is purpose-built to increase power density.

The low on-resistance of the MOSFET released reduces voltage drops and minimises conduction power losses to enable higher power density. Combining this low RDS(ON) with an ultra-low gate charge of 84nC, the SiRA99DP delivers best in class gate charge times on-resistance, a critical figure of merit (FOM) for MOSFETs used in switching applications, of 185mΩ*nC.

Well suited for circuits with a 12V input, the device is optimised for adapter, battery, and general purpose power switches; reverse polarity battery protection; OR-ing functionality; and motor drive control in telecom equipment, servers, and industrial PCs and robots.

The SiRA99DP's increased power density saves PCB space in these applications by reducing the number of components needed in parallel, in other words, by delivering more current per individual device. In addition, as a p-channel MOSFET, the device doesn't require a charge pump to provide the positive gate bias needed by its n-channel counterparts.

The MOSFET is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities of the SiRA99DP are available now, with lead times of 12 weeks subject to market conditions.

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