Before the PowerPAIR package type, designers would have to use two single devices to achieve the low on-resistance and high maximum current required for system power, POL, low-current dc-to-dc, and synchronous buck applications in notebooks, VRMs, power modules, graphic cards, servers, and gaming consoles, and dc-to-dc conversion in industrial systems.
For example, the regular dual PowerPAK 1212-8 has an on-resistance of about 30 mΩ with a maximum current below 10 A, not making it a viable option. A single PowerPAK 1212-8 has on-resistances down to the 5 mΩ range. The low-side Channel 2 MOSFET of the SiZ700DT, however, offers a comparable on-resistance of 5.8 mΩ at 10 V and 6.6 mΩ at 4.5 V, and a maximum current of 17.3 A at + 25 °C and 13.9 A at + 70 °C. In addition, the high-side Channel 1 MOSFET features an on-resistance of 8.6 mΩ at 10 V and 10.8 mΩ at 4.5 V, and a maximum current of 13.1 A at + 25 °C and 10.5 A at + 70 °C. These specifications allow designers to use one device, saving solution cost and space, including the clearance and labeling area in between the two discrete MOSFETs. In some lower-current and lower-voltage applications, the PowerPAIR device could even be used to replace two SO-8-packaged MOSFETs, saving at least two-thirds on space.
By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. In addition, the SiZ700DT’s pinning is arranged so that a typical buck converter�s input is on one side and its output is on the other, further simplifying the layout.