Optimised for load, battery, and supervisory switches, the Si5411EDU, Si5415AEDU, and SiSS23DN are designed to increase power efficiency in mobile computing and industrial control devices. With , designers can achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.
Providing low on-resistance of 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in the 3.0 mm by 1.9 mm PowerPAK ChipFET package, the -12 V Si5411EDU is perfectly suited for applications where saving PCB space is critical. Offering RDS(on) values of 9.6 mΩ (-4.5 V) and 13.2 mΩ (-2.5 V) in the same package, the -20 V Si5415AEDU is useful when a higher voltage rating is needed. Both the Si5411EDU and the Si5415AEDU provide typical ESD protection of 5000 V. The SiSS23DN is ideal for applications requiring extremely low on-resistance, providing values of 4.5 mΩ (-4.5 V) and 6.3 mΩ (-2.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8S package with a low 0.75 mm profile.
100 % Rg- and UIS-tested, the Si5411EDU, Si5415AEDU, and SiSS23DN MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.