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Power MOSFET with Industry-First 6.1 Milliohms On-Resistance in SO-8 Size Package

1st September 2009

Vishay

ES Admin

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A power MOSFET with what is claimed to be the industry’s lowest on-resistance for a 60-V device in a package with double-sided cooling was released today by Vishay. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-V gate drive, a 13 % improvement over the next best comparable device on the market.

The n-channel SiE876DF is targeted at industrial-type power supplies, motor control circuits, AC/DC power supplies for servers and routers, and systems using point-of-load (POL) power conversion. It will also be used as a primary side switch or for secondary side rectification in higher voltage intermediate bus conversion (IBC) designs.

In each of these applications, the low on-resistance of the SiE876DF will translate into lower conduction losses and thus save on energy. In addition to the low conduction losses provided by its TrenchFET® silicon, the double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature. The PolarPAK’s leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout as other PolarPAK devices with a drain-source voltage rating under 150 V, thus simplifying PCB design. The SiE876DF is also 100 % Rg- and UIS-tested.