UnitedSiC expands Schottky diode portfolio
UnitedSiC has announced four new Junction Barrier Schottky diodes to complement its FET and JFET transistor products. With good surge current performance, the UJ3D 1,200V and 1,700V devices are part of the company’s 3rd generation of SiC Merged-PiN-Schottky (MPS) diodes. Possessing a VF x Qc figure of merit (FoM), these SiC SB diodes are optimised for power system designs requiring elevated efficiency levels and ultra-fast switching speed.
Having a >8.8mm clearance between the anode and the cathode means they are better at coping with high pollution environments where voltage transients are likely to be present. In high current situations, the novel PN junction arrangement featured enables the injection of additional charge carriers.
There is a 1,700V 25A-rated option, plus three 1,200V devices in ten, 20 and 50A-rated options. Fully compliant with the AEC-Q101 automotive standard, all SiC diodes come in a compact TO247-2L package format and in die form. Applications that will benefit most from these new SiC diodes include fast-charge electric vehicle (EV) charging access points, industrial motor drives and solar energy inverters.
Anup Bhalla, VP Engineering at UnitedSiC, explained: “Through the unique characteristics of the UJ3D1725K2, we can provide our customers with reliable, space-saving, cost-effective SiC diodes that have substantially better performance levels and assured quality, supported by high volume manufacturing.”
The UJ3D1725K2 1000-up resale price is $6.47. The UJ3D1210K2, UJ3D1220K2 and UJ3D1250K2 1000-up resale prices are $2.24, $3.39, and $9.55 respectively. All devices are available from authorised distributors.
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