Ultrafast RF MOSFET driver has high peak output current

17th August 2017

IXYS

Anna Flockett

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Datasheet

IXYS Corporation a power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications company has announced the introduction of the IXRFD615 ultrafast low-side RF MOSFET gate driver by its IXYS Colorado division. The IXRFD615 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

The IXRFD615 can source and sink 15 Amperes of peak current while producing voltage rise and fall times of less than 5ns and minimum pulse widths of 8ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range.

The IXRFD615 is packaged in a low-inductance surface mount RF package incorporating advanced layout techniques to minimise stray lead inductances for optimum switching performance.

Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD615 unmatched in performance and value.

Features:

Isolated substrate
- High isolation voltage (in excess of 2500 V)
- Excellent thermal transfer
- Increased temperature and power cycling capability
High peak output current
Low output impedance
Low quiescent supply current
Low propagation delay
High capacitive load drive capability
Wide operating voltage range

Advantages:

Optimised for RF and high speed
Easy to mount, no insulators needed
High power density
RoHS compliant

Applications:

Class D and E RF generators
Multi-MHz switch mode power supplies
Pulsed transformer drivers
Pulsed laser diode drivers
High speed pulse generators

“The IXRFD615 driver is an exciting addition to IXYSRF’s growing family of components for high frequency power RF system design,” commented Stephen Krausse, General Manager of IXYS Colorado. “Incorporating IXYS’ cutting-edge high speed CMOS die technology with IXYSRF’s low-inductance surface mount RF package, the IXRFD615 offers industry-leading RF performance.”