Two eGaN discrete transistors are qualified to AEC Q101 for automotive use
Two eGaN discrete transistors are qualified to AEC Q101 for automotive applications, announces Efficient Power Conversion (EPC). The company believes the certification brings its eGaN technology to vehicle design.
The EPC2202 and EPC2203 transistors are offered in wafer level chip-scale packaging with 80VDS ratings. Although the company has been producing eGaN technology devices for more than eight years, used in automotive applications, such as light detection and ranging (lidar) and radar for autonomous cars, 48 to 12V DC/DC converters, and high intensity headlamps, these are the first to have completed AEC Q101 qualification testing.
The EPC2202 is an 80V, 16mΩ enhancement-mode FET with a pulsed current rating of 75A. It is in a 2.1 x 1.6mm chip-scale package. The EPC2203 is an 80V, 73mΩ transistor with a pulsed current rating of 18A and provided in a 0.9 x 0.9mm chip-scale package. To complete AEC Q101 testing, the eGaN FETs underwent rigorous environmental and bias-stress testing, including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB) and temperature cycling.
These eGaN FETs are many times smaller and achieve switching speeds 10 to 100 times faster than their silicon MOSFET counterparts, claims the company. They are designed for a range of emerging automotive applications to enable autonomous driving and improve fuel economy and safety, including lidar, high intensity headlights, 48 to 12V DC/DC converters and high-fidelity infotainment systems. The wafer level chip scale packaging passed the same testing standards created for conventional packaged parts. This, says the company, demonstrates the performance of chip-scale packaging does not compromise ruggedness or reliability.
Both devices are available for immediate delivery from Digi-Key.