The transistors are 40% smaller than the directly competing DFN1006 (SOT883) parts and deliver the same or better electrical performance. The company’s initial DFN0606 bipolar transistor offerings are two NPN and PNP devices handling a power dissipation performance as high as 830mW.
The 40V MMBT3904FZ and MMBT3906FZ significantly boost power density and also provide a high 200mA collector current; while the 45V BC847BFZ and BC857BFZ provide a collector current of 100mA. All four devices switch on at a base-emitter voltage of less than 1V, enabling them to be fully turned on under conditions of very low portable power.