Transformer enables MOSFETs to be activated up to 2500V
To enable MOSFETs to be activated under conditions of high insulation voltages, a gate-drive transformer in the EP7 design has been released by Würth Elektronik. The transformer, which is designed to be fitted to a synchronously aligned flyback converter, enables MOSFETs to be activated up to 2500V.
According to EN61558-2-16, the construction of the transformer is equivalent to a basic insulation for operating voltages of 250Vrms. Between the primary and secondary windings, a test voltage of 2500 VAC is guaranteed.
Compared to other products within the WE-GDT series, the transformer's Vµs is 70% higher, allowing secondary-sided MOSFETs to be activated quickly. By protecting against external magnetic fields and reducing it's own radiated magnetic field, the EP7 core lessens the electromagnetic emission of the end application.
The transformer, which is designed with three separate windings and up to five different winding ratios, are available now.
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Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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