Using Toshiba’s latest, seventh generation n-channel process technology, the new SSM3K333R MOSFET is optimised for standard voltage switching requirements. It exhibits maximum ON resistance (RDS(ON)) values of only 42mΩ and 28mΩ with switching voltages of VGS=4.5V and 10V, respectively.
As well as extremely low resistance values that enable the low loss operation essential for battery-operated equipment the SSM3K333R is specified for a maximum drain-source voltage (VDSS) of 30V. As a result the device is also compatible with many industrial power management applications.
Another improvement is the new SOT-23F package, which offers significantly lower thermal resistance against comparable package sizes. This improvement leads to a maximum DC current rating of 6A and a drain power dissipation capability of 1W from a package that has dimensions of only 2.9mm x 2.4mm.
Toshiba expands family of semi power devices with new n-channel power management MOSFET
Toshiba Electronics Europe (TEE) has announced a new addition to its family of low voltage MOSFETs. The new n-channel device – which is a member of the company’s continuously expanding SSM series of small signal MOSFETs – has very low loss characteristics that make it ideal for power management in a variety of portable, battery-powered applications.