Power Integrations’ 1700V switcher IC
Power Integrations announced five new reference designs targeting 800V automotive applications based on the company’s 1700V InnoSwitch3-AQ flyback switcher ICs.
Spanning power levels from 16 to 120W, the designs leverage both wound and low-profile planar transformers and target automotive applications such as DC/DC bus conversion, inverter emergency power, battery management and power supplies for auxiliary systems. The designs feature Power Integrations’ new wide-creepage InSOP-28G package, which supports 1000VDC on the primary side while providing appropriate creepage and clearance between pins in pollution degree 2 environments.
Pulsiv reveals remarkably cool 65-70W USB-C modules at PCIM 2025
At this year’s PCIM expo in Nürnberg, Pulsiv caught lots of attention with what could be a transformative step forward in USB-C fast charging for installed applications.
The UK-based power electronics specialist unveiled a new line of fully assembled 65W–70W USB-C modules that deliver impressively high efficiency, extremely low temperatures, and compact form factors – targeted at integration into wall sockets, desks, and furniture. To learn more, I sat down and spoke with Nick Theodoris, Director of Global Sales & Distribution at Pulsiv, about the core features of this exciting new solution.
Latest GaN half-bridge drivers from STMicroelectronics
STMicroelectronics’ new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features for greater efficiency and robustness.
The latest STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density, and ruggedness in consumer and industrial applications.
The STDRIVEG610 addresses applications requiring an extremely fast 300ns start-up time which is an important parameter for converter topologies like LLC or ACF ensuring accurate controlled turn-off intervals in burst mode.
Rad hard GaN transistors include DLA JANS certified device
Infineon Technologies has released the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its CoolGan technology.
Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
Navitas unveils 12kW power supply unit at COMPUTEX
Navitas Semiconductor has announced its latest 12 kW power supply unit (PSU) ‘designed for production’ reference design for hyperscale AI data centres with high-power rack densities of 120kW.
The 12 kW PSU complies with Open Rack v3 (ORv3) specifications and Open Compute Project (OCP) guidelines. It utilises Gen-3 Fast SiC MOSFETs utilises, a novel IntelliWeave digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies to ensure the highest efficiency and performance, with the lowest component count.
