Danisense launches low-noise power supply
Danisense is introducing the DSSIU-1-V, a new low-noise power supply and interface unit designed to support a wide range of its flux gate current transducers (DCCTs).
Featuring an industry-standard D-sub-9 connector, the DSSIU-1-V unit ensures reliable and straightforward interfacing. (Read more.)
1.3kW fully digital, configurable, modular AC/DC power supply
XP Power introduces its FLXPro series. The FLX1K3 is a 1.3kW configurable chassis mount AC/DC power supply designed to simplify power systems for healthcare, industrial applications, semiconductor manufacturing, analytical instrumentation, automation, renewable energy systems, and robotics.
Housed in a compact 1U form factor, measuring 254.0 x 88.9 x 40.6mm (10.0 x 3.50 x 1.6”), the FLXPro series delivers power levels of 1.3kW at high line conditions and 1kW at low line with market-leading power density of up to 58.9W/cm³ (23.2W/in³). Its compact size and high-power density reduce end application size and complexity, addressing application space constraints and the need for increased power. (Read more.)
GaN inverter brings power to medium-voltage motor drives
Efficient Power Conversion Corporation (EPC) announces the release of the EPC9196, a high-performance 25 ARMS, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET.
The EPC9196 is specifically designed for medium-voltage (96-150V) battery-powered motor drive applications, including steering systems in automated guided vehicles (AGVs), traction motors in compact autonomous vehicles, and precision motor joints in robotics. (Read more.)
Bourns introduces thick film on steel product line
Bourns, a manufacturer and supplier of electronic components for power, protection, and sensing solutions, introduced its Thick Film on Steel (TFOS) product line that features advanced capabilities designed to support high energy applications.
Bourns Model TFOS30-1-150 is the first in the new line. This AEC-Q200 compliant product delivers an exceptional power rating and extended temperature range. (Read more.)
WIN Semiconductors announces linearity optimised 0.12µm GaN power process
WIN Semiconductors, a company in advanced semiconductor solutions and the world’s largest pure-play compound semiconductor foundry, has announced the launch of its NP12-1B, a 0.12μm gate-length depletion-mode (D-mode) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology on Silicon Carbide (SiC) substrates.
Engineered for demanding high-power applications across K-Band to V-Band frequencies, NP12-1B delivers high power front end solutions with exceptional linearity, ruggedness, and reliability for next-generation RF and microwave systems. (Read more.)
