Toshiba's Latest 600V Super Junction MOSFETs Combine Leading RDS(ON)
Toshiba Electronics Europe has announced the European launch of a family of 600V MOSFETs with integrated high-speed intrinsic diodes. Based on the company’s fourth generation 600V super junction DTMOS IV process, the new MOSFETs will improve power efficiency in switching power supplies, micro inverters, adaptors, and photovoltaic inverters.The
The TK16A60W5 is supplied in a TO-220SIS package. Maximum current rating is 15.8A and RDS(ON) is 0.23Ω. The diode shows an excellent typical reverse recovery time of 100ns. In comparison, the standard version shows a trr of 280ns. Both the TK31J60W5 and TK39J60W5 are supplied in a TO-3P(N) package and have maximum currents of 30.8A and 38.8A respectively. Maximum respective RDS(ON) ratings (VGS = 10V) are just 0.099Ω and 0.074Ω . Typical trr diode characteristics are 135ns and 150ns. Variants in TO-247 packaging are scheduled to be available by autumn 2013.
Super junction MOSFETs offer ultra-low ON resistance without power loss penalties. Using Toshiba's state-of-the-art single epitaxial process, the fourth generation super junction 600V DTMOS IV MOSFET series provides a 30% reduction in RDS(ON)•A - a figure of merit for MOSFETs - compared to its predecessor, DTMOS III. A reduction in RDS(ON)•A, makes it possible to house lower resistance chips in the same packages, helping to improve the efficiency and reduce the size of power supplies.