Three devices added to 120mΩ, 650V SiC MOSFETs range
Availability and full design support capabilities for three new 120mΩ, 650V SiC MOSFETs from Wolfspeed, has been announced by Richardson RFPD.
Wolfspeed’s 650V SiC MOSFET portfolio is based on the latest third generation C3M SiC MOSFET technology, offering a wide range of on-resistances, and what is claimed to be the industry’s lowest on-state resistances in a discrete package, as well as low switching losses - enabling high efficiency and power density.
The new SiC MOSFETs are available in both through-hole (TO-247-3, TO-247-4) and surface mount (TO-263-7) packages.
Additional key features of the MOSFETs include superior overall system level efficiency, high frequency operation and a robust body diode with low reverse recovery charge.
The devices also offer Kelvin Source connection to reduce parasitic inductance and switching losses and come in industry-standard packages that meet creepage and clearance requirements
Target applications include server power supplies, EV charging systems, energy storage systems (UPS) and solar (PV) inverters.
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APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
